Photoconductive Switches

Compact modules for pulsed terahertz generation

Fiber-Coupled InGaAs Antennas
SM/PM fiber pigtail and Silicon lens included
High bandwidth > 6 THz, typ. 70 µW power
Core components of TeraFlash pro and TeraFlash smart

Pulsed terahertz generation with leading-edge technology: InGaAs antennas provide about 30 µW power and a bandwidth of 6 THz. The emitter and detector modules, developed by Fraunhofer Heinrich-Hertz Institute (Berlin/Germany), are packaged with a Silicon lens and SM/PM fiber. A new transceiver combines emitter and receiver in a single housing, enabling reflection measurements at vertical incidence. All devices can be used with TOPTICA’s TeraFlash pro and TeraFlash smart, but are available as individual modules too.

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Specification

Specifications	Photoconductive Switches
Terahertz emitter	InGaAs/InP photoconductive switch with strip-line antenna
Terahertz receiver	InGaAs/InP photoconductive switch with dipole antenna
Emitter / receiver bandwidth	6 THz

Additional Information

Multilayer structure of the emitter/receiver modules.

Pulse trace of an InGaAs photoconductive switch.
Applications
Downloads
- Product Brochure Terahertz Systems
Literature
- Publication: M. Yahyapour et al., Fastest thickness measurements with a terahertz time-domain system based on electronically controlled optical sampling; Appl. Sciences (2019)
- Overview Article: Lang, M., et al., Laser-based terahertz generation & applications, Photonik International (2012)
- Scientific Paper: Vieweg et al., Terahertz-time domain spectrometer with 90 dB peak dynamic range, J Infrared Milli Terahz Waves, 2014
- Review paper: Naftaly, M., et al., Industrial applications of terahertz sensing: State of play, Sensors (2019)
- Scientific paper: Damyanov, D., et al., High resolution lensless terahertz imaging and ranging, IEEE Access (2019)
Related Products
- TeraFlash pro: Time-domain terahertz platform
- TeraFlash smart
- Imaging Extension

Semiconductor material	Multi-layer structure of InGaAs and InAIAs on InP
Wavelength	1.5 µm
Average terahertz power	Typ. 70 µW @ 20 mW laser power
Package	Cylindrical, integrated Si lens and SM/PM fiber pigtail Emitter / receiver modules: Ø 25 mm, 34 mm length
Recommended operating conditions	Laser power 20 mW average Max. bias +100 V (unipolar, emitter), ± 3 V (receiver, only for testing)